1 of 2 1n5391g ? 1n5399g features ! ! lo w forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability mec h anical data c ! case: m olded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.40 grams (approx.) ! mounting position: any ! marking: type number maximum ra t ings and electrical characteristics @t a =2 5c unl ess otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol 1n 5391g 1n 5392g 1n 5393g 1n 5395g 1n 5397g 1n 5398g 1n 5399g unit peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms revers e voltage v r(rms) 35 70 140 280 420 560 700 v av erage rec tified output current (note 1) @t a = 75 c i o 1.5 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a forward vo l tage @i f = 1. 5a v fm 1.0 v peak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100c i rm 5.0 50 a ty pi cal junction capacitance (note 2) c j 30 pf ty pi cal thermal resistance junction to ambient (note 1) r ja 50 k/ w operati ng t emperature range t j -65 to +150 c st orage t emperature range t stg -65 to +150 c note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1n5391g ? 1n5399g ! le a d fr ee: for rohs / lead free version z ibo seno electronic engineering co., ltd. www.senocn.com 1.5a glass passiv ated rectifier g las s passivated die construction do-15 di m min max a 24. 5 ? b 5. 50 7. 62 c 0.60 0. 80 d 2. 60 3. 60 a ll d imensions in mm a l l d a t a s h e e t
2 of 2 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 1.6 i , inst ant aneous forward current (a) f v , inst ant aneous forward voltage (v) fig. 2 typical forward characteristics f t = 25c pulse width = 300s duty cycle l 2% j 25 50 75 100 125 150 175 t ambient temperature (oc) fig. 1, forward current derating curve a i , average forward rectified current (a) (av) 0 0.5 1.0 1.5 1.0 10 100 1.0 10 100 c , cap acit ance (pf) j v , reverse vol tage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 1.0 10 100 0 10 20 30 40 50 number of cycles a t 60hz fig. 3 maximum non-repetitive peak forward surge current i , peak for ward surge current (a) fsm 8.3 ms single half sine-wave (jedec method) 1n5391g ? 1n5399g 1n5391g ? 1n5399g z ibo seno electronic engineering co., ltd. www.senocn.com a l l d a t a s h e e t
|
